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SOURCE Raytheon Company
Leading remarkable advancements in power and performance for warfighters
TEWKSBURY, Mass., Feb. 18, 2014 /PRNewswire/ -- Raytheon Company (NYSE: RTN) has embarked on its fifteenth year of pioneering the development and system integration of gallium nitride (GaN) technology. In 1999, Raytheon commenced research in GaN at the Raytheon Foundry in Andover, Mass. Today, Raytheon remains at the forefront of GaN innovation, demonstrating the maturity of the technology which significantly extends the warfighter's reach into the battle space by increasing radar ranges, sensitivity and search capabilities.
"GaN technologies are transforming the way we address the evolving needs of our customers," said Paul Ferraro, vice president of Advanced Technology for Raytheon's Integrated Defense Systems business. "Through partnerships with the Office of the Secretary of Defense (OSD) and DARPA, we are harnessing the revolutionary power, efficiency and performance improvements that GaN provides in programs today including AMDR and Next Generation Jammer. We are optimistic about its impact on future initiatives like 3DELRR and others."
Raytheon Company, with 2013 sales of $24 billion and 63,000 employees worldwide, is a technology and innovation leader specializing in defense, security and civil markets throughout the world. With a history of innovation spanning 92 years, Raytheon provides state-of-the-art electronics, mission systems integration and other capabilities in the areas of sensing; effects; and command, control, communications and intelligence systems, as well as cyber security and a broad range of mission support services. Raytheon is headquartered in Waltham, Mass. For more about Raytheon, visit us at www.raytheon.com and follow us on Twitter @Raytheon.
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